Aluminum-(Silicon Carbide) Composite


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Aluminum-(Silicon Carbide) Advanced Substrate

Aluminum-(Silicon Carbide) is a metal-ceramic composite material consisting of silicon carbide particles dispersed in a matrix of aluminum alloy. It combines the benefits of high thermal conductivity of metal and low CTE (coefficient of thermal expansion) of ceramic.

With its composite features, Al-SiC is an advanced packaging material for high technology thermal management. Al-SiC is compatible with a wide range of metallic and ceramic substrate and plating materials used in microelectronic packaging for aerospace, automotive, microwave applications. Al-SiC allows for a new packaging technology that can replace traditional W-Cu, Mo, BeO, Kovar, Mo-Cu, AlN, AlSi, Al2O3.

Photo: Al-SiC heatsinks & subtrates

Photo: Al-SiC substrates

Benefits:

	tailor-made coefficient of thermal expansion (eliminates thermal cycling fatigue due to CTE mismatch).
	high thermal conductivity (conducts heat almost like aluminum)
	light weight and strong (almost as light as aluminum but stronger, it is excellent for aerospace, automotive and other mobile applications).
	precision surface treatment (surface roughness; hole-drilling; plating with nickel, gold, silver, tin, etc.)
	cost effective production

Applications:

	advanced printed circuit board
	microelectronic packaging
	radiofrequency and microwave packaging
	optoelectronic packaging

Typical Properties:

Density, g/cm³	2.95 - 3.00
Thermal Conductivity, W/m•K	170 - 200
Thermal Expansion Coefficient, E-6 K^-1	tailor-made from 6.5 to 9.5
Electrical Resistivity, mW•cm	30 - 50
Bending Strength, MPa	350 - 500
Elastic Modulus, GPa	200 - 230

Microscopic picture of Al-SiC composite: