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Crystalline Silicon Carbide nano and sub-micron Powder

Green alpha and beta silicon carbide powder

for silicon carbide nano whiskers, visit:


Benefits & Potentials Properties Microscopy Data X-ray Data


Our clients include U.S. major corporations and research institutes in aerospace, energy and microelectronic industries.

Photos are courtesy of NASA, Sandia National Lab, U.S. Dept. of Energy and Clinton White House Archive.  They are shown for inspirations only, and do not necessarily reflect relations (or lack there of) with the organizations.


Nano Crystalline Silicon Carbide Offer Superior Properties:


extreme hardness (25-50 GPa bulk and film indentation hardness [ref. 1, 2])


large semiconductor bandgap (2-3 times larger than silicon [ref. 3])


high electric breakdown field (3-5 times larger than Si [ref. 3])


high thermal conductivity (~390 W/m.K for crystals [ref. 4], ~30 W/m.K for SiC-fiber/SiC-matrix composite [ref. 5, 6])


high specific stiffness (about 3 times larger than Si [ref. 7])


high temperature stability

Potential Applications:


mechanical reinforcement for fracture and wear resistance.


high power and microwave electronics


nanoelectromechanical systems (NEMS)



alpha silicon carbide powder   beta silicon carbide powder
crystal structure hexagonal, rhombohedral   crystal structure cubic
average particle size

0.5 microns

  average particle size 50 nanometer

SiC %

≥ 99%   microscopy & X-Ray TEM, XRD
Fe2O3 % ≤ 0.05%   purity > 99.0 %
F.C. ≤ 0.10%   Si free ions % < 0.2 %
      Cl % < 0.09 %
      total oxide % < 0.61 %
      density 3.21 g/cm3
      packing density 0.05 g/cm3
      surface area > 90 m2/g
      Moh's hardness 9.5 - 9.75


average particle size of 300 nm is also available


Beta Silicon Carbide Powder: TEM, Transmission Electron Microscopy

50 nm particle size 300 nm particle size
TEM photo: beta silicon carbide powder 50 nm size TEM photo: beta silicon carbide 300 nm size


Beta Silicon Carbide Powder: XRD, X-Ray Diffractometry

XRD: beta silicon carbide powder



1. Liao, et. al., Applied Physics Letters, 86, 171913 (2005)

2. Vassen, et. al., J. Am. Ceram. Soc., 82, 2585 (1999)

3. Neudeck, J. Electronic Materials, 24, 283 (1995)

4. Burgemeister, et. al., J. Applied Physics, 50, 5790 (1979)

5. Donaldson, et. al., J. Am. Ceram. Soc., 81, 1583 (1998)

6. Katoh, et. al., Ceramic Transactions, 144, 77 (2002)

7. Yang, et. al., Applied Physics Letters, 78, 162 (2001)


Note: Final properties of a silicon carbide film or shape depend on the preparation technique and conditions.